 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BPX 63 Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low Dark Current BPX 63 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 350 nm bis 1100 nm q Sperrstromarm (typ. 5 pA) q TO-18, Bodenplatte, mit klarem EpoxyGieharz Anwendungen q Belichtungsmesser, Belichtungsautomaten Features q Especially suitable for applications from 350 nm to 1100 nm q Low reverse current (typ. 5 pA) q TO-18, base plate, transparent epoxy resin lens Applications q Exposure meters, automatic exposure timers Typ Type BPX 63 Bestellnummer Ordering Code Q62702-P55 Semiconductor Group 361 10.95 fet06012 BPX 63 Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 C Total power dissipation Symbol Symbol Wert Value - 40 ... + 80 230 Einheit Unit C C Top; Tstg TS VR Ptot 7 200 V mW Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 10 ( 8) 800 350 ... 1100 Einheit Unit nA/Ix nm nm S S max S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Dunkelstrom, VR = 1 V Dark current A LxB LxW H 0.97 0.985 x 0.985 mm2 mm 0.2 ... 0.8 mm 75 5 ( 20) Grad deg. pA IR Semiconductor Group 362 BPX 63 Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnung Description Nullpunktsteilheit, E = 0 Zero crossover Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage Kurzschlustrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 1 k; VR = 5 V; = 850 nm; Ip = 10 A Durchlaspannung, IF = 100 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 1 V, = 850 nm Nachweisgrenze, VR = 1 V, = 850 nm Detection limit Symbol Symbol Wert Value 0.4 0.50 0.73 450 ( 380) 10 1.3 Einheit Unit pA/mV A/W Electrons Photon mV A s S0 S VO ISC tr, tf VF C0 TCV TCI NEP 1.3 100 - 2.6 0.16 2.5 x 10-15 V pF mV/K %/K W Hz cm * Hz W D* 3.9 x 1013 Semiconductor Group 363 BPX 63 Relative spectral sensitivity Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit-voltage VO = f (Ev) Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Capacitance C = f (VR), f = 1 MHz, E = 0 Dark current IR = f (TA), Ev = 0 V, VR = 1 V Directional characteristics Srel = f () Semiconductor Group 364 |
Price & Availability of Q62702-P55
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |